Invention Grant
- Patent Title: Programmable memory repair scheme
- Patent Title (中): 可编程内存修复方案
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Application No.: US12082136Application Date: 2008-04-09
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Publication No.: US07768847B2Publication Date: 2010-08-03
- Inventor: Adrian E. Ong , Fan Ho
- Applicant: Adrian E. Ong , Fan Ho
- Applicant Address: US CA Los Altos
- Assignee: Rambus Inc.
- Current Assignee: Rambus Inc.
- Current Assignee Address: US CA Los Altos
- Agency: Park, Vaughan & Fleming LLP
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
The present disclosure provides semiconductor devices and methods, systems, and apparatus for testing and operating the same. A semiconductor memory device includes data storage elements and a repair circuit. The data storage elements include primary data storage elements and one or more redundant data storage elements, the primary data storage elements having respective addresses for memory access operations. The repair circuit is programmable by another semiconductor device separate from the memory device to recognize a malfunctioning address of the primary data storage elements and the programmed repair circuit is configured to reroute memory access from a primary data storage element having the recognized malfunctioning address to a corresponding redundant data storage element.
Public/Granted literature
- US20090257296A1 Programmable memory repair scheme Public/Granted day:2009-10-15
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