Invention Grant
US07768855B2 Semiconductor memory device and sense amplifier 有权
半导体存储器件和读出放大器

Semiconductor memory device and sense amplifier
Abstract:
In a sense amplifier circuit having a plurality of sense amplifier portions arranged in order, each of the sense amplifier portions includes a transistor that supplies a bit line potential to a bit line pair in a corresponding column of a memory cell array and a gate electrode for supplying a precharge signal to a gate of the transistor. The gate electrode of the plurality of sense amplifier portions is provided as one piece as a whole and extends in a direction parallel to a row direction in the memory cell array. A gate electrode portion which is a connected portion between the gate electrode in a k-th sense amplifier portion and the gate electrode in a (k+1)-th sense amplifier portion is ring-shaped, where k is an odd number.
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