Invention Grant
- Patent Title: Semiconductor memory device and sense amplifier
- Patent Title (中): 半导体存储器件和读出放大器
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Application No.: US12506631Application Date: 2009-07-21
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Publication No.: US07768855B2Publication Date: 2010-08-03
- Inventor: Takeshi Ohgami
- Applicant: Takeshi Ohgami
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Young & Thompson
- Priority: JP2007-002273 20070110
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
In a sense amplifier circuit having a plurality of sense amplifier portions arranged in order, each of the sense amplifier portions includes a transistor that supplies a bit line potential to a bit line pair in a corresponding column of a memory cell array and a gate electrode for supplying a precharge signal to a gate of the transistor. The gate electrode of the plurality of sense amplifier portions is provided as one piece as a whole and extends in a direction parallel to a row direction in the memory cell array. A gate electrode portion which is a connected portion between the gate electrode in a k-th sense amplifier portion and the gate electrode in a (k+1)-th sense amplifier portion is ring-shaped, where k is an odd number.
Public/Granted literature
- US20090279372A1 SEMICONDUCTOR MEMORY DEVICE AND SENSE AMPLIFIER Public/Granted day:2009-11-12
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