Invention Grant
US07768864B2 Non-volatile memory device capable of supplying power 失效
能够供电的非易失性存储器件

  • Patent Title: Non-volatile memory device capable of supplying power
  • Patent Title (中): 能够供电的非易失性存储器件
  • Application No.: US12212960
    Application Date: 2008-09-18
  • Publication No.: US07768864B2
    Publication Date: 2010-08-03
  • Inventor: Chwei-Jing Yeh
  • Applicant: Chwei-Jing Yeh
  • Applicant Address: TW Hsinchu
  • Assignee: Ritek Corporation
  • Current Assignee: Ritek Corporation
  • Current Assignee Address: TW Hsinchu
  • Agency: J.C. Patents
  • Priority: TW97213913U 20080804
  • Main IPC: G11C7/00
  • IPC: G11C7/00
Non-volatile memory device capable of supplying power
Abstract:
A non-volatile memory device capable of supplying power is provided. The non-volatile memory device includes an electrical storage device for supplying a stored power, a charging control circuit coupled to the electrical storage device, a non-volatile memory, an input/output (I/O) interface, and a power control circuit. The I/O interface connects an electronic apparatus for transmitting an external power output from the electronic apparatus to the non-volatile memory and the charging control circuit, such that the charging control circuit could control a charging current and a charging voltage of the electrical storage device. The power control circuit converts the stored power into a backup power, and monitors whether a voltage value of the external power is less than a predetermined value. If the result is positive, the power control circuit controls the charging control circuit to stop charging the electrical storage device, and outputs the backup power through the I/O interface.
Public/Granted literature
Information query
Patent Agency Ranking
0/0