Invention Grant
- Patent Title: Non-volatile memory device capable of supplying power
- Patent Title (中): 能够供电的非易失性存储器件
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Application No.: US12212960Application Date: 2008-09-18
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Publication No.: US07768864B2Publication Date: 2010-08-03
- Inventor: Chwei-Jing Yeh
- Applicant: Chwei-Jing Yeh
- Applicant Address: TW Hsinchu
- Assignee: Ritek Corporation
- Current Assignee: Ritek Corporation
- Current Assignee Address: TW Hsinchu
- Agency: J.C. Patents
- Priority: TW97213913U 20080804
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
A non-volatile memory device capable of supplying power is provided. The non-volatile memory device includes an electrical storage device for supplying a stored power, a charging control circuit coupled to the electrical storage device, a non-volatile memory, an input/output (I/O) interface, and a power control circuit. The I/O interface connects an electronic apparatus for transmitting an external power output from the electronic apparatus to the non-volatile memory and the charging control circuit, such that the charging control circuit could control a charging current and a charging voltage of the electrical storage device. The power control circuit converts the stored power into a backup power, and monitors whether a voltage value of the external power is less than a predetermined value. If the result is positive, the power control circuit controls the charging control circuit to stop charging the electrical storage device, and outputs the backup power through the I/O interface.
Public/Granted literature
- US20100027365A1 NON-VOLATILE MEMORY DEVICE CAPABLE OF SUPPLYING POWER Public/Granted day:2010-02-04
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