Invention Grant
- Patent Title: Quantum dot based semiconductor waveguide devices
- Patent Title (中): 量子点式半导体波导器件
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Application No.: US12076618Application Date: 2008-03-20
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Publication No.: US07769062B2Publication Date: 2010-08-03
- Inventor: Zhenguo Lu , Jiaren Liu , Sylvain Raymond , Philip Poole , Pedro Barrios , Daniel Poitras
- Applicant: Zhenguo Lu , Jiaren Liu , Sylvain Raymond , Philip Poole , Pedro Barrios , Daniel Poitras
- Applicant Address: CA Ottawa
- Assignee: National Research Council of Canada
- Current Assignee: National Research Council of Canada
- Current Assignee Address: CA Ottawa
- Agent Raffoul Brion
- Main IPC: H01S3/10
- IPC: H01S3/10 ; H01S3/091

Abstract:
Methods and devices for providing a multiwavelength laser which may be used for multicasting and other optical communications uses. The present invention provides a quantum dot based multiwavelength laser with a monolithic gain block. The Fabry-Perot gain block has both upper and lower InP cladding layers. The laser system has a middle quantum dot layer with multiple stacked layers of InAs quantum dots embedded in InGaAsP. When provided with a CW injection current, the laser system produces an output spectra with equally spaced multiple emission peaks. With an input optical data signal applied to the laser system, the laser system duplicates the data in the input signal across multiple different wavelengths.
Public/Granted literature
- US20090238228A1 Quantum dot based semiconductor waveguide devices Public/Granted day:2009-09-24
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