Invention Grant
US07769944B2 Partial-write-collector algorithm for multi level cell (MLC) flash
有权
用于多级单元(MLC)闪存的部分写入 - 收集器算法
- Patent Title: Partial-write-collector algorithm for multi level cell (MLC) flash
- Patent Title (中): 用于多级单元(MLC)闪存的部分写入 - 收集器算法
-
Application No.: US11774906Application Date: 2007-07-09
-
Publication No.: US07769944B2Publication Date: 2010-08-03
- Inventor: Jianjun Luo , Chris Tsu , Charles Chung Lee , David Queichang Chow
- Applicant: Jianjun Luo , Chris Tsu , Charles Chung Lee , David Queichang Chow
- Applicant Address: US CA San Jose
- Assignee: SuperTalent Electronics, Inc.
- Current Assignee: SuperTalent Electronics, Inc.
- Current Assignee Address: US CA San Jose
- Agency: IPxLaw Group LLP
- Agent Maryam Imam
- Main IPC: G06F12/00
- IPC: G06F12/00

Abstract:
A flash memory system includes a multi level cell (MLC) flash memory organized into blocks and having pages of information, which has data and spare. The MLC flash memory includes at least a temporary area to store at least a portion of a page of information during a partial write operation. The MLC flash memory stores a page of information into a block identified by a target physical address. The flash memory system further includes a flash card micro-controller causes communication between a host flash card controller and the MLC flash memory and includes a buffer memory configured to store a portion of a page of information, where the micro-controller writes the at least a portion of a page of information to the temporary area and later copies the written at least a portion of a page of information into the block identified by a target physical address.
Public/Granted literature
- US20080037321A1 Partial-Write-Collector Algorithm for Multi Level Cell (MLC) Flash Public/Granted day:2008-02-14
Information query