发明授权
- 专利标题: Planarized microelectronic substrates
- 专利标题(中): 平面微电子基板
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申请号: US10494240申请日: 2002-11-06
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公开(公告)号: US07771779B2公开(公告)日: 2010-08-10
- 发明人: Kenneth L. Foster , Michael J. Radler
- 申请人: Kenneth L. Foster , Michael J. Radler
- 专利权人: Dow Global Technologies Inc.
- 当前专利权人: Dow Global Technologies Inc.
- 国际申请: PCT/US02/35756 WO 20021106
- 国际公布: WO03/064495 WO 20030807
- 主分类号: C23C18/00
- IPC分类号: C23C18/00
摘要:
The instant invention is a process for planarizing a microelectronic substrate with a cross-linked polymer dielectric layer, comprising the steps of: (a) heating such a substrate coated with a layer comprising an uncured cross-linkable polymer and a glass transition suppression modifier to a temperature greater than the glass transition temperature of the layer, the temperature being less than the curing temperature of the uncured cross-linkable polymer to form a substrate coated with a heat flowed layer; and (b) heating the substrate coated with the heat flowed layer to a curing temperature of the uncured cross-linkable polymer of the heated layer to cure the uncured cross-linkable polymer to form a planarized substrate wherein the percent planarization at 100 micrometers is greater than fifty percent. The instant invention is a microelectronic device made using the above-described process. The instant invention is a composition of matter, comprising: an essentially solvent free composition comprising an uncured cross-linkable polymer and a glass transition suppression modifier, the composition having a glass transition temperature sufficiently less than the curing temperature of the uncured composition so that if the uncured composition is heated to a temperature above its glass transition temperature but below its curing temperature, the uncured composition will flow.
公开/授权文献
- US20040241338A1 Planarized microelectronic substrates 公开/授权日:2004-12-02
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