发明授权
US07771903B2 Photolithography with optical masks having more transparent features surrounded by less transparent features 有权
具有光学掩模的光刻具有更透明的特征,由较不透明的特征包围

Photolithography with optical masks having more transparent features surrounded by less transparent features
摘要:
In photolithographic exposure, a feature (144) of an optical mask is projected onto a dark area (160). The light intensity inside the dark area is reduced by providing a non-printable clear cutout (410) inside the feature. The optical mask has the same optical pathlength outside the feature (144) adjacent to the entire outer boundary of the feature as at the cutout, the optical pathlength being measured along the optical mask's thickness.
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