发明授权
- 专利标题： Semiconductor apparatus manufacturing method
- 专利标题（中）： 半导体装置的制造方法
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申请号： US11650495申请日： 2007-01-08
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公开(公告)号： US07772031B2公开(公告)日： 2010-08-10
- 发明人: Takekazu Tanaka , Kouhei Takahashi
- 申请人： Takekazu Tanaka , Kouhei Takahashi
- 申请人地址： JP Kanagawa
- 专利权人： NEC Electronics Corporation
- 当前专利权人： NEC Electronics Corporation
- 当前专利权人地址： JP Kanagawa
- 代理机构： Foley & Lardner LLP
- 优先权： JP2006-015505 20060124; JP2006-351653 20061227
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
The semiconductor apparatus includes a semiconductor chip, and a source electrode and a gate electrode which are formed on the semiconductor chip and electrically connected with a lead frame. The source electrode is electrically connected with the lead frame by being laser-welded with a thin-film shaped connecting portion formed at an end of the lead frame. This enables the provision of a semiconductor apparatus with enhanced productivity and yields which exhibits high electrical operability and reliability.
公开/授权文献
- US20070172980A1 Semiconductor apparatus manufacturing method 公开/授权日：2007-07-26