发明授权
- 专利标题： Methods of forming a single layer substrate for high capacity memory cards
- 专利标题（中）： 形成高容量存储卡的单层基板的方法
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申请号： US11538220申请日： 2006-10-03
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公开(公告)号： US07772107B2公开(公告)日： 2010-08-10
- 发明人: Cheemen Yu , Hem Takiar , Chih-Chin Liao
- 申请人： Cheemen Yu , Hem Takiar , Chih-Chin Liao
- 申请人地址： US CA Milpitas
- 专利权人： SanDisk Corporation
- 当前专利权人： SanDisk Corporation
- 当前专利权人地址： US CA Milpitas
- 代理机构： Vierra Magen Marcus & DeNiro LLP
- 主分类号： H01L21/44
- IPC分类号： H01L21/44 ; H01L21/48 ; H01L21/50
摘要：
Methods of forming a semiconductor package including a single-sided substrate are disclosed. In a first embodiment of the present invention, a substrate may include a conductive layer on a top surface of the substrate, i.e., on the same side of the substrate as where the die are mounted. In a second embodiment of the present invention, a substrate may include a conductive layer on a bottom of the substrate, i.e., on the opposite side of the substrate as where the die are mounted.
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