发明授权
US07772659B2 Magnetic device having perpendicular magnetization and interaction compensating interlayer
有权
具有垂直磁化和相互作用补偿中间层的磁性装置
- 专利标题： Magnetic device having perpendicular magnetization and interaction compensating interlayer
- 专利标题（中）： 具有垂直磁化和相互作用补偿中间层的磁性装置
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申请号： US11876045申请日： 2007-10-22
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公开(公告)号： US07772659B2公开(公告)日： 2010-08-10
- 发明人: Bernard Rodmacq , Vincent Baltz , Alberto Bollero , Bernard Dieny
- 申请人： Bernard Rodmacq , Vincent Baltz , Alberto Bollero , Bernard Dieny
- 申请人地址： FR Paris FR Paris
- 专利权人： Commissariat a l'Energie Atomique,Centre National de la Recherche Scientifique
- 当前专利权人： Commissariat a l'Energie Atomique,Centre National de la Recherche Scientifique
- 当前专利权人地址： FR Paris FR Paris
- 代理机构： Burr & Brown
- 优先权： FR0654448 20061023
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L29/82
摘要：
The magnetic device comprises a least two layers made of a magnetic material that are separated by at least one interlayer made of a non-magnetic material. The layers made of a magnetic material each have magnetization oriented substantially perpendicular to the plane of the layers. The layer of non-magnetic material induces an antiferromagnetic coupling field between the layers made of a magnetic material, the direction and amplitude of this field attenuating the effects of the ferromagnetic coupling field of magnetostatic origin that occurs between the magnetic layers.
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