A method for detecting defects during semiconductor device processing can include providing a substrate having a semiconductor comprising layer with electrically isolated application and test circuits are formed thereon, directing an electron current inducing beam to the test circuit; measuring a current between the first and the second contact pads in the test circuit; determining an electron beam induced current (EBIC); and identifying one or more defect locations in the test circuit based on the EBIC and a location of the electron beam corresponding to the EBIC. A test circuit can include a plurality of semiconductor devices connected in parallel, a first contact pad coupled to a first terminal of the semiconductor devices, and at least a second contact pad coupled to a substrate terminal associated with the semiconductor devices.