发明授权

  • 专利标题: Organic thin film transistor and method of manufacturing the organic thin film transistor, and display apparatus using the same
  • 专利标题(中): 有机薄膜晶体管及其制造方法以及使用其的显示装置
  • 申请号: US11638384
    申请日: 2006-12-14
  • 公开(公告)号: US07773166B2
    公开(公告)日: 2010-08-10
  • 发明人: Nack Bong ChoiMin Joo Kim
  • 申请人: Nack Bong ChoiMin Joo Kim
  • 申请人地址: KR Seoul
  • 专利权人: LG Display Co., Ltd.
  • 当前专利权人: LG Display Co., Ltd.
  • 当前专利权人地址: KR Seoul
  • 代理机构: McKenna Long & Aldridge
  • 优先权: KR10-2006-0034446 20060417
  • 主分类号: G02F1/136
  • IPC分类号: G02F1/136
Organic thin film transistor and method of manufacturing the organic thin film transistor, and display apparatus using the same
摘要:
Provided are an organic semiconductor structure and a method of manufacturing the same, an organic thin film transistor (OTFT) using the organic semiconductor structure and a method of manufacturing the OTFT, and a display apparatus using the same. The OTFT includes: an oxide layer formed on a base substrate; a source electrode on the oxide layer, wherein the source electrode includes a first source electrode portion and a second source electrode portion; a drain electrode on the oxide layer, wherein the drain electrode includes a first drain electrode portion and a second drain electrode portion; an organic layer pattern having an opening that exposes the first source electrode portion and the first drain electrode portion; an organic semiconductor pattern electrically connected to the first source electrode portion and the first drain electrode portion through the opening, wherein the organic semiconductor pattern has a conductive or an insulating property depending on an applied electric field in a location; a gate insulating layer covering the organic semiconductor pattern; and a gate electrode formed on the gate insulating layer corresponding to the organic semiconductor pattern.
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