发明授权
- 专利标题： Manufacturing method of semiconductor wafer having a trench structure and epitaxial layer
- 专利标题（中）： 具有沟槽结构和外延层的半导体晶片的制造方法
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申请号： US10562235申请日： 2005-03-31
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公开(公告)号： US07776710B2公开(公告)日： 2010-08-17
- 发明人: Syouji Nogami , Yukichi Horioka , Shoichi Yamauchi
- 申请人： Syouji Nogami , Yukichi Horioka , Shoichi Yamauchi
- 申请人地址： JP Tokyo JP Aichi
- 专利权人： Sumco Corporation,Denso Corporation
- 当前专利权人： Sumco Corporation,Denso Corporation
- 当前专利权人地址： JP Tokyo JP Aichi
- 代理机构： Greenblum and Bernstein P.L.C.
- 优先权： JP2004-110634 20040405
- 国际申请： PCT/JP2005/006268 WO 20050331
- 国际公布： WO2005/098912 WO 20051020
- 主分类号： H01L21/76
- IPC分类号： H01L21/76
摘要：
A resistivity of an epitaxial layer in a trench is changed in a stepwise manner by reducing a quantity of an impurity diffused into the epitaxial layer in the trench from a semiconductor wafer in a stepwise manner, thereby suppressing an influence of auto-doping from the semiconductor wafer.An epitaxial layer 17 is grown in a trench 16 of a semiconductor wafer 10 having a trench structure by gradually reducing a temperature in a temperature in the range of 400 to 1150° C. by a vapor growth method while supplying a silane gas as a raw material gas, thereby filling the epitaxial layer 17 in the trench 16.
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