发明授权
- 专利标题： Method for fabricating a semiconductor on insulator wafer
- 专利标题（中）： 绝缘子半导体晶片制造方法
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申请号： US11746297申请日： 2007-05-09
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公开(公告)号： US07776716B2公开(公告)日： 2010-08-17
- 发明人: Chrystel Deguet , Takeshi Akatsu , Hubert Moriceau , Thomas Signamarcheix , Loic Sanchez
- 申请人： Chrystel Deguet , Takeshi Akatsu , Hubert Moriceau , Thomas Signamarcheix , Loic Sanchez
- 申请人地址： FR Bernin FR Paris
- 专利权人： S.O.I.Tec Silicon on Insulator Technologies,Commissariat à l'Energie Atomique (CEA)
- 当前专利权人： S.O.I.Tec Silicon on Insulator Technologies,Commissariat à l'Energie Atomique (CEA)
- 当前专利权人地址： FR Bernin FR Paris
- 代理机构： Winston & Strawn LLP
- 优先权： EP06290815 20060518
- 主分类号： H01L21/46
- IPC分类号： H01L21/46 ; H01L21/30
摘要：
A method for fabricating semiconductor on insulator wafers by providing a semiconductor substrate or a substrate that includes an epitaxial semiconductor layer as a source substrate, attaching the source substrate to a handle substrate to form a source handle assembly and detaching the source substrate at a predetermined splitting area provided inside the source substrate and being essentially parallel to its main surface, to remove a layer from the source handle assembly to thereby create the semiconductor on insulator wafer. A diffusion barrier layer, in particular, an oxygen diffusion barrier layer can be provided on the source substrate. In addition the invention relates to the corresponding semiconductor on insulator wafers that are produced by the method.
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