- 专利标题： Controlled process and resulting device
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申请号： US11841970申请日： 2007-08-20
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公开(公告)号： US07776717B2公开(公告)日： 2010-08-17
- 发明人: Francois J. Henley , Nathan W. Cheung
- 申请人： Francois J. Henley , Nathan W. Cheung
- 申请人地址： US CA San Jose
- 专利权人： Silicon Genesis Corporation
- 当前专利权人： Silicon Genesis Corporation
- 当前专利权人地址： US CA San Jose
- 代理机构： Townsend and Townsend and Crew LLP
- 主分类号： H01L21/30
- IPC分类号： H01L21/30
摘要：
A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.
公开/授权文献
- US20080038901A1 Controlled Process and Resulting Device 公开/授权日：2008-02-14
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