发明授权
- 专利标题： Pitch multiplication spacers and methods of forming the same
- 专利标题（中）： 间距倍增器及其形成方法
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申请号： US11219346申请日： 2005-09-01
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公开(公告)号： US07776744B2公开(公告)日： 2010-08-17
- 发明人: Gurtej S. Sandhu , Kirk D. Prall
- 申请人： Gurtej S. Sandhu , Kirk D. Prall
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Knobbe, Martens, Olson & Bear LLP
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; H01L21/461
摘要：
Spacers in a pitch multiplication process are formed without performing a spacer etch. Rather, the mandrels are formed over a substrate and then the sides of the mandrels are reacted, e.g., in an oxidization, nitridation, or silicidation step, to form a material that can be selectively removed relative to the unreacted portions of the mandrel. The unreacted portions are selectively removed to leave a pattern of free-standing spacers. The free-standing spacers can serve as a mask for subsequent processing steps, such as etching the substrate.
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