发明授权
- 专利标题： III-V hemt devices
- 专利标题（中）： III-V血液装置
-
申请号： US11632665申请日： 2005-06-22
-
公开(公告)号： US07777252B2公开(公告)日： 2010-08-17
- 发明人: Masahiro Sugimoto , Tetsu Kachi , Yoshitaka Nakano , Tsutomu Uesugi , Hiroyuki Ueda , Narumasa Soejima
- 申请人： Masahiro Sugimoto , Tetsu Kachi , Yoshitaka Nakano , Tsutomu Uesugi , Hiroyuki Ueda , Narumasa Soejima
- 申请人地址： JP Toyota-shi, Aichi-ken
- 专利权人： Toyota Jidosha Kabushiki Kaisha
- 当前专利权人： Toyota Jidosha Kabushiki Kaisha
- 当前专利权人地址： JP Toyota-shi, Aichi-ken
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, LLP
- 优先权： JP2004-210989 20040720
- 国际申请： PCT/JP2005/011891 WO 20050622
- 国际公布： WO2006/008925 WO 20060126
- 主分类号： H01L29/739
- IPC分类号： H01L29/739 ; H01L31/072
摘要：
A semiconductor device has a stacked structure in which a p-GaN layer, an SI-GaN layer, and an AlGaN layer are stacked, and has a gate electrode that is formed at a top surface side of the AlGaN layer. A band gap of the AlGaN layer is wider than a band gap of the p-GaN layer and the SI-GaN layer. Moreover, impurity concentration of the SI-GaN layer is less than 1×1017 cm−3. Semiconductor devices including III-V semiconductors may have a stable normally-off operation.
公开/授权文献
- US20080073652A1 III-V Hemt Devices 公开/授权日：2008-03-27
信息查询
IPC分类:
