Invention Grant
- Patent Title: Self-aligned tunneling pocket in field-effect transistors and processes to form same
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Application No.: US12228457Application Date: 2008-08-13
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Publication No.: US07777282B2Publication Date: 2010-08-17
- Inventor: Prashant Majhi , Wilman Tsai , Jack Kavalieros , Ravi Pillarisetty , Benjamin Chu-Kung
- Applicant: Prashant Majhi , Wilman Tsai , Jack Kavalieros , Ravi Pillarisetty , Benjamin Chu-Kung
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agent John N. Greaves
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94
Abstract:
A microelectronic device includes a tunneling pocket within an asymmetrical semiconductive body including source- and drain wells. The tunneling pocket is formed by a self-aligned process by removing a dummy gate electrode from a gate spacer and by implanting the tunneling pocket into the semiconductive body or into an epitaxial film that is part of the semiconductive body.
Public/Granted literature
- US20100038713A1 Self-aligned tunneling pocket in field-effect transistors and processes to form same Public/Granted day:2010-02-18
Information query
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