Invention Grant
- Patent Title: Integrated circuit device and fabrication method therefor
- Patent Title (中): 集成电路器件及其制造方法
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Application No.: US11052215Application Date: 2005-02-08
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Publication No.: US07777288B2Publication Date: 2010-08-17
- Inventor: Naoyoshi Kawahara , Hiroshi Murase , Hiroaki Ohkubo , Kuniko Kikuta , Yasutaka Nakashiba , Naoki Oda , Tokuhito Sasaki , Nobukazu Ito
- Applicant: Naoyoshi Kawahara , Hiroshi Murase , Hiroaki Ohkubo , Kuniko Kikuta , Yasutaka Nakashiba , Naoki Oda , Tokuhito Sasaki , Nobukazu Ito
- Applicant Address: JP Kawasaki, Kanagawa JP Tokyo
- Assignee: NEC Electronics Corporation,NEC Corporation
- Current Assignee: NEC Electronics Corporation,NEC Corporation
- Current Assignee Address: JP Kawasaki, Kanagawa JP Tokyo
- Agency: McGinn IP Law Group PLLC
- Priority: JP2004-032660 20040209
- Main IPC: H01L31/058
- IPC: H01L31/058

Abstract:
In a temperature sensor section of a semiconductor integrated circuit device, wires of the topmost wiring layer of a multi-layer wiring structure are formed. A sheet-like temperature monitor element of vanadium oxide is provided between two of the wires in such a way as to cover the two wires. Accordingly, the temperature monitor element is connected between the two wires of an underlying wiring layer of the multi-layer wiring structure through two vias and the two wires of the topmost wiring layer.
Public/Granted literature
- US20050173775A1 Integrated circuit device and fabrication method therefor Public/Granted day:2005-08-11
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