Invention Grant
- Patent Title: Integrated photodiode of the floating substrate type
- Patent Title (中): 浮动基板类型的集成光电二极管
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Application No.: US11432678Application Date: 2006-05-10
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Publication No.: US07777289B2Publication Date: 2010-08-17
- Inventor: François Roy , Arnaud Tournier
- Applicant: François Roy , Arnaud Tournier
- Applicant Address: FR Montrouge
- Assignee: STMicroelectronics S.A.
- Current Assignee: STMicroelectronics S.A.
- Current Assignee Address: FR Montrouge
- Agency: Gardere Wynne Sewell LLP
- Priority: FR0504836 20050513
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
An integrated circuit includes at least one photodiode of the floating substrate type which is associated with a read transistor. The photodiode is formed from a buried layer lying beneath the floating substrate and an upper layer lying on the floating substrate. The upper layer incorporates the source and drain regions of the read transistor. The source and drain regions are produced on either side of the gate of the read transistor. An isolating trench is located alongside the source region and extends from the upper surface of the upper layer down to below the buried layer, so as to isolate the source region from said buried layer.
Public/Granted literature
- US20060258042A1 Integrated photodiode of the floating substrate type Public/Granted day:2006-11-16
Information query
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