发明授权
- 专利标题: Integrated photodiode of the floating substrate type
- 专利标题(中): 浮动基板类型的集成光电二极管
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申请号: US11432678申请日: 2006-05-10
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公开(公告)号: US07777289B2公开(公告)日: 2010-08-17
- 发明人: François Roy , Arnaud Tournier
- 申请人: François Roy , Arnaud Tournier
- 申请人地址: FR Montrouge
- 专利权人: STMicroelectronics S.A.
- 当前专利权人: STMicroelectronics S.A.
- 当前专利权人地址: FR Montrouge
- 代理机构: Gardere Wynne Sewell LLP
- 优先权: FR0504836 20050513
- 主分类号: H01L27/146
- IPC分类号: H01L27/146
摘要:
An integrated circuit includes at least one photodiode of the floating substrate type which is associated with a read transistor. The photodiode is formed from a buried layer lying beneath the floating substrate and an upper layer lying on the floating substrate. The upper layer incorporates the source and drain regions of the read transistor. The source and drain regions are produced on either side of the gate of the read transistor. An isolating trench is located alongside the source region and extends from the upper surface of the upper layer down to below the buried layer, so as to isolate the source region from said buried layer.
公开/授权文献
- US20060258042A1 Integrated photodiode of the floating substrate type 公开/授权日:2006-11-16
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