发明授权
- 专利标题: Semiconductor device with capacitor
- 专利标题(中): 带电容器的半导体器件
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申请号: US11856775申请日: 2007-09-18
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公开(公告)号: US07777300B2公开(公告)日: 2010-08-17
- 发明人: Helmut Tews , Hans-Gerd Jetten , Alexander von Glasow , Hans-Joachim Barth
- 申请人: Helmut Tews , Hans-Gerd Jetten , Alexander von Glasow , Hans-Joachim Barth
- 申请人地址: DE Neubiberg
- 专利权人: Infineon Technologies AG
- 当前专利权人: Infineon Technologies AG
- 当前专利权人地址: DE Neubiberg
- 代理商 Philip H. Schlazer
- 主分类号: H01L23/52
- IPC分类号: H01L23/52
摘要:
One or more embodiments are related to a semiconductor structure, comprising: a semiconductor chip having a final metal layer; a dielectric layer disposed over the final metal layer; and a conductive layer deposed over the dielectric layer, the dielectric layer being between the final metal layer and the conductive layer.
公开/授权文献
- US20090073633A1 SEMICONDUCTOR DEVICE WITH CAPACITOR 公开/授权日:2009-03-19
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