发明授权
- 专利标题: Methods and apparatus for controlling characteristics of a plasma
- 专利标题(中): 用于控制等离子体特性的方法和装置
-
申请号: US11934197申请日: 2007-11-02
-
公开(公告)号: US07777599B2公开(公告)日: 2010-08-17
- 发明人: Steven C. Shannon , Daniel J. Hoffman , Matthew L. Miller , Olga Regelman , Kenneth S. Collins , Kartik Ramaswamy , Kallol Bera
- 申请人: Steven C. Shannon , Daniel J. Hoffman , Matthew L. Miller , Olga Regelman , Kenneth S. Collins , Kartik Ramaswamy , Kallol Bera
- 申请人地址: US CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Moser IP Law Group
- 主分类号: H01P7/06
- IPC分类号: H01P7/06 ; H05B31/26
摘要:
Methods and apparatus for controlling characteristics of a plasma, such as the spatial distribution of RF power and plasma uniformity, are provided herein. In some embodiments, an apparatus for controlling characteristics of a plasma includes a resonator for use in conjunction with a plasma reactor, the resonator including a source resonator for receiving an RF signal having a first frequency; a return path resonator disposed substantially coaxially with, and at least partially within, the source resonator; and an outer conductor having the source resonator and the return path resonator disposed substantially coaxially with, and at least partially within, the outer conductor, the outer conductor for providing an RF ground connection.
公开/授权文献
信息查询