发明授权
US07777884B2 Method and system for optimizing sub-nanometer critical dimension using pitch offset 有权
使用间距偏移优化亚纳米临界尺寸的方法和系统

Method and system for optimizing sub-nanometer critical dimension using pitch offset
摘要:
A method and a system are provided for calibrating metrological tools used to measure features of a semiconductor device. A critical dimension (CD) ruler defines a known pitch plus a pitch offset. A photoresist layer is measured to determine a measured pitch whereupon the measured pitch is compared to the known pitch. From the comparison, appropriate calibration steps can be taken to reduce the difference between the known pitch and the measured pitch.
信息查询
0/0