发明授权
US07777884B2 Method and system for optimizing sub-nanometer critical dimension using pitch offset
有权
使用间距偏移优化亚纳米临界尺寸的方法和系统
- 专利标题: Method and system for optimizing sub-nanometer critical dimension using pitch offset
- 专利标题(中): 使用间距偏移优化亚纳米临界尺寸的方法和系统
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申请号: US11625997申请日: 2007-01-23
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公开(公告)号: US07777884B2公开(公告)日: 2010-08-17
- 发明人: Chih-Ming Ke , Shinn-Sheng Yu , Yu-Hsi Wang , Jacky Huang , Tsai-Sheng Gau , Kuo-Chen Huang
- 申请人: Chih-Ming Ke , Shinn-Sheng Yu , Yu-Hsi Wang , Jacky Huang , Tsai-Sheng Gau , Kuo-Chen Huang
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Haynes and Boone, LLP
- 主分类号: G01B11/00
- IPC分类号: G01B11/00
摘要:
A method and a system are provided for calibrating metrological tools used to measure features of a semiconductor device. A critical dimension (CD) ruler defines a known pitch plus a pitch offset. A photoresist layer is measured to determine a measured pitch whereupon the measured pitch is compared to the known pitch. From the comparison, appropriate calibration steps can be taken to reduce the difference between the known pitch and the measured pitch.
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