发明授权
- 专利标题： Method for producing an integrated circuit including a semiconductor
- 专利标题（中）： 包括半导体的集成电路的制造方法
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申请号： US11831362申请日： 2007-07-31
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公开(公告)号： US07781294B2公开(公告)日： 2010-08-24
- 发明人: Anton Mauder , Hans-Joachim Schulze
- 申请人： Anton Mauder , Hans-Joachim Schulze
- 申请人地址： AT Villach
- 专利权人： Infineon Technologies Austria AG
- 当前专利权人： Infineon Technologies Austria AG
- 当前专利权人地址： AT Villach
- 代理机构： Dicke, Billig & Czaja, PLLC
- 优先权： DE102006035630 20060731
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A method for producing an integrated circuit including a semiconductor is disclosed. In one embodiment, crystal defects are produced by irradiation in the material of the underlying semiconductor substrate which crystal defects form an inhomogeneous crystal defect density distribution in the vertical direction of the semiconductor component and lead to a corresponding inhomogeneous distribution of the carrier lifetime.
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