发明授权
US07781346B2 Methods of forming patterns and capacitors for semiconductor devices using the same
失效
使用其形成用于半导体器件的图案和电容器的方法
- 专利标题： Methods of forming patterns and capacitors for semiconductor devices using the same
- 专利标题（中）： 使用其形成用于半导体器件的图案和电容器的方法
-
申请号： US11455815申请日： 2006-06-20
-
公开(公告)号： US07781346B2公开(公告)日： 2010-08-24
- 发明人: Cheol-Woo Park , Byoung-Moon Yoon , Yong-Sun Ko , Kyung-Hyun Kim , Kwang-Wook Lee
- 申请人： Cheol-Woo Park , Byoung-Moon Yoon , Yong-Sun Ko , Kyung-Hyun Kim , Kwang-Wook Lee
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2005-0052852 20050620
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
摘要：
A semiconductor structure may be formed by a wet etching process using an etchant containing water. The semiconductor structure may include a plurality of patterns having an increased or higher aspect ratio and may be arranged closer to one another. A dry cleaning process may be performed using hydrogen fluoride gas on the semiconductor structure.