发明授权
US07781839B2 Structure and method for strained transistor directly on insulator
有权
应变晶体管直接在绝缘体上的结构和方法
- 专利标题： Structure and method for strained transistor directly on insulator
- 专利标题（中）： 应变晶体管直接在绝缘体上的结构和方法
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申请号： US11694273申请日： 2007-03-30
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公开(公告)号： US07781839B2公开(公告)日： 2010-08-24
- 发明人: Voon-Yew Thean , Bich-Yen Nguyen
- 申请人： Voon-Yew Thean , Bich-Yen Nguyen
- 申请人地址： US TX Austin
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 当前专利权人地址： US TX Austin
- 代理商 Kim-Marie Vo
- 主分类号： H01L27/092
- IPC分类号： H01L27/092
摘要：
A semiconductor device (10) comprising a substrate (12) and an oxide layer (14) formed over the substrate is provided. The semiconductor device further includes a first semiconductor layer (16) having a first lattice constant formed directly over the oxide layer. The semiconductor device further includes a second semiconductor layer (26) having a second lattice constant formed directly over the first semiconductor layer, wherein the second lattice constant is different from the first lattice constant.
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