发明授权
- 专利标题： Magnetoresistive element having free layer, pinned layer, and spacer layer disposed therebetween, the spacer layer including semiconductor layer
- 专利标题（中）： 具有自由层，钉扎层和间隔层的磁阻元件设置在它们之间，间隔层包括半导体层
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申请号： US11698180申请日： 2007-01-26
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公开(公告)号： US07782575B2公开(公告)日： 2010-08-24
- 发明人: Yoshihiro Tsuchiya , Kei Hirata , Tomohito Mizuno , Koji Shimazawa
- 申请人： Yoshihiro Tsuchiya , Kei Hirata , Tomohito Mizuno , Koji Shimazawa
- 申请人地址： JP Tokyo
- 专利权人： TDK Corporation
- 当前专利权人： TDK Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Oliff & Berridge, PLC
- 优先权： JP2006-244678 20060908; JP2006-275972 20061010
- 主分类号： G11B5/39
- IPC分类号： G11B5/39
摘要：
An MR element includes: a free layer having a direction of magnetization that changes in response to a signal magnetic field; a pinned layer having a fixed direction of magnetization; and a spacer layer disposed between these layers. The spacer layer includes a first nonmagnetic metal layer and a second nonmagnetic metal layer each made of a nonmagnetic metal material, and a semiconductor layer that is made of a material containing an oxide semiconductor and that is disposed between the first and second nonmagnetic metal layers. The MR element has a resistance-area product within a range of 0.1 to 0.3Ω·μm2, and the spacer layer has a conductivity within a range of 133 to 432 S/cm.
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