发明授权
- 专利标题： Semiconductor memory device
- 专利标题（中）： 半导体存储器件
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申请号： US12420275申请日： 2009-04-08
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公开(公告)号： US07782700B2公开(公告)日： 2010-08-24
- 发明人: Kenichi Kuboyama , Hideaki Arima
- 申请人： Kenichi Kuboyama , Hideaki Arima
- 申请人地址： JP Kanagawa
- 专利权人： NEC Electronics Corporation
- 当前专利权人： NEC Electronics Corporation
- 当前专利权人地址： JP Kanagawa
- 代理机构： Young & Thompson
- 优先权： JP2008-101411 20080409
- 主分类号： G11C7/00
- IPC分类号： G11C7/00 ; G11C5/14
摘要：
In a semiconductor or memory device, a first ODT (On Die Termination) circuit is provided between a termination voltage port and a command input port. A first ODT controlling circuit is connected between the termination voltage port and the first ODT circuit, and detects a level of a voltage applied to the termination voltage port and controls the first ODT circuit to connect the termination voltage port and the command input port based on the detection result.
公开/授权文献
- US20090256587A1 SEMICONDUCTOR MEMORY DEVICE 公开/授权日：2009-10-15
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