发明授权
- 专利标题： Extreme low resistivity light attenuation anti-reflection coating structure and method for manufacturing the same
- 专利标题（中）： 极低电阻率光衰减抗反射涂层结构及其制造方法
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申请号： US11905883申请日： 2007-10-05
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公开(公告)号： US07785714B2公开(公告)日： 2010-08-31
- 发明人: Cheng-Chieh Chang , Shiu-Feng Liu , Pi-Jui Kuo
- 申请人： Cheng-Chieh Chang , Shiu-Feng Liu , Pi-Jui Kuo
- 申请人地址： TW Hsinchu City
- 专利权人： Innovation & Infinity Global Corp.
- 当前专利权人： Innovation & Infinity Global Corp.
- 当前专利权人地址： TW Hsinchu City
- 代理机构： Rosenberg, Klein & Lee
- 主分类号： B32B7/00
- IPC分类号： B32B7/00 ; B32B15/00
摘要：
An extreme low resistivity light attenuation anti-reflection coating structure with a surface protective layer includes a substrate, a coating module, and a composed protection coating layer. The coating module is formed on a front surface of the substrate. The coating module is composed of a plurality of silicon carbide compound coating layers and a plurality of metal coating layers that are alternately stacked with each other. The composed protection coating layer is formed on the coating module.
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