发明授权
- 专利标题： Discrete trap non-volatile multi-functional memory device
- 专利标题（中）： 离散陷阱非易失性多功能存储设备
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申请号： US12212970申请日： 2008-09-18
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公开(公告)号： US07786516B2公开(公告)日： 2010-08-31
- 发明人: Arup Bhattacharyya
- 申请人： Arup Bhattacharyya
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Leffert Jay & Polglaze P.A.
- 主分类号： H01L29/80
- IPC分类号： H01L29/80
摘要：
A multiple layer tunnel insulator is fabricated between a substrate and a discrete trap layer. The properties of the multiple layers determines the volatility of the memory device. The composition of each layer and/or the quantity of layers is adjusted to fabricate either a DRAM device, a non-volatile memory device, or both simultaneously.
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