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发明授权
US07787306B2 Nonvolatile semiconductor memories for preventing read disturbance and reading methods thereof 有权
用于防止读取干扰的非易失性半导体存储器及其读取方法

Nonvolatile semiconductor memories for preventing read disturbance and reading methods thereof
摘要：
A method of reading a flash memory device can include driving a selected word line by applying a selection voltage thereto and driving unselected word lines by applying a first voltage thereto, driving the unselected word lines and first and second selection lines by applying a second voltage that is higher than the first voltage thereto, and reading data from a memory cell that is coupled to the selected word line.
摘要（中）：

一种读取闪速存储器件的方法可以包括通过向其施加选择电压来驱动所选择的字线并通过向其施加第一电压来驱动未选择的字线，通过施加第二电压来驱动未选择的字线和第一和第二选择线， 高于其第一电压，并且从耦合到所选字线的存储单元读取数据。

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