发明授权
US07787687B2 Pattern shape evaluation apparatus, pattern shape evaluation method, method of manufacturing semiconductor device, and program
有权
图案形状评价装置，图案形状评价方法，半导体装置的制造方法以及程序
- 专利标题： Pattern shape evaluation apparatus, pattern shape evaluation method, method of manufacturing semiconductor device, and program
- 专利标题（中）： 图案形状评价装置，图案形状评价方法，半导体装置的制造方法以及程序
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申请号： US11589057申请日： 2006-10-30
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公开(公告)号： US07787687B2公开(公告)日： 2010-08-31
- 发明人: Yumiko Miyano , Tadashi Mitsui
- 申请人： Yumiko Miyano , Tadashi Mitsui
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权： JP2005-316036 20051031
- 主分类号： G06K9/00
- IPC分类号： G06K9/00
摘要：
A pattern shape evaluation method includes acquiring design data accompanied by an evaluation area in which information on a particular evaluation area within a pattern of a semiconductor device is added to the design data for the pattern, acquiring an image of the pattern, generating edge data for the pattern from the image of the pattern, aligning the design data accompanied by the evaluation area with the edge data and evaluating the shape of the pattern within the evaluation area after the alignment.
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