Invention Grant
US07790523B2 Mask for forming a thin-film transistor, thin-film transistor substrate manufactured using the same and method of manufacturing a thin-film transistor substrate using the same
有权
用于形成薄膜晶体管的掩模，使用该薄膜晶体管制造的薄膜晶体管衬底以及使用其制造薄膜晶体管衬底的方法
- Patent Title: Mask for forming a thin-film transistor, thin-film transistor substrate manufactured using the same and method of manufacturing a thin-film transistor substrate using the same
- Patent Title (中): 用于形成薄膜晶体管的掩模，使用该薄膜晶体管制造的薄膜晶体管衬底以及使用其制造薄膜晶体管衬底的方法
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Application No.: US11861113Application Date: 2007-09-25
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Publication No.: US07790523B2Publication Date: 2010-09-07
- Inventor: Young-Wook Lee , Woo-Geun Lee , Jung-In Park , Youn-Hee Cha
- Applicant: Young-Wook Lee , Woo-Geun Lee , Jung-In Park , Youn-Hee Cha
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Innovation Counsel LLP
- Priority: KR10-2006-0094197 20060927
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/84
Abstract:
A mask that is capable of forming a thin-film transistor (TFT) with improved electrical characteristics is presented. The mask includes a drain mask pattern, a source mask pattern and a light-adjusting pattern. The drain mask pattern blocks light for forming a drain electrode. The source mask pattern blocks light for forming a source electrode and faces the drain mask pattern. A distance between the drain and source mask patterns is no more than the resolution of an exposing device. The light-adjusting pattern is formed between end portions of the source mask pattern and the drain mask pattern to block at least some light from entering a space between the source and drain mask patterns.
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