发明授权
US07791058B2 Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication
有权
增强的存储密度电阻可变存储器单元，阵列，包括其的器件和系统以及制造方法
- 专利标题： Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication
- 专利标题（中）： 增强的存储密度电阻可变存储器单元，阵列，包括其的器件和系统以及制造方法
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申请号： US12491911申请日： 2009-06-25
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公开(公告)号： US07791058B2公开(公告)日： 2010-09-07
- 发明人: Jun Liu
- 申请人： Jun Liu
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Dickstein Shapiro LLP
- 主分类号： H01L29/02
- IPC分类号： H01L29/02 ; H01L21/00
摘要：
A resistance variable memory cell and method of forming the same. The memory cell includes a first electrode and at least one layer of resistance variable material in contact with the first electrode. A first, second electrode is in contact with a first portion of the at least one layer of resistance variable material and a second, second electrode is in contact with a second portion of the at least one layer of resistance variable material.
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