发明授权
- 专利标题： Solid-state imaging device
- 专利标题（中）： 固态成像装置
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申请号： US12277982申请日： 2008-11-25
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公开(公告)号： US07791118B2公开(公告)日： 2010-09-07
- 发明人: Yoshiaki Kitano , Hideshi Abe , Jun Kuroiwa , Kiyoshi Hirata , Hiroaki Ohki , Nobuhiro Karasawa , Ritsuo Takizawa , Mitsuru Yamashita , Mitsuru Sato , Katsunori Kokubun
- 申请人： Yoshiaki Kitano , Hideshi Abe , Jun Kuroiwa , Kiyoshi Hirata , Hiroaki Ohki , Nobuhiro Karasawa , Ritsuo Takizawa , Mitsuru Yamashita , Mitsuru Sato , Katsunori Kokubun
- 申请人地址： JP Tokyo
- 专利权人： Sony Corporation
- 当前专利权人： Sony Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Sonnenschein Nath & Rosenthal LLP
- 优先权： JP2003-060328 20030306; JP2003-094120 20030331
- 主分类号： H01L31/113
- IPC分类号： H01L31/113
摘要：
A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.
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