发明授权
- 专利标题: Semiconductor memory device
- 专利标题(中): 半导体存储器件
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申请号: US12396130申请日: 2009-03-02
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公开(公告)号: US07791122B2公开(公告)日: 2010-09-07
- 发明人: Takahiro Yokoyama
- 申请人: Takahiro Yokoyama
- 申请人地址: JP Tokyo
- 专利权人: Renesas Technology Corp.
- 当前专利权人: Renesas Technology Corp.
- 当前专利权人地址: JP Tokyo
- 代理机构: McDermott Will & Emery LLP
- 优先权: JP2003-433992 20031226
- 主分类号: H01L27/108
- IPC分类号: H01L27/108 ; H01L29/76
摘要:
In a full CMOS SRAM having a lateral type cell (memory cell having three partitioned wells arranged side by side in a word line extending direction and longer in the word line direction than in the bit line direction) including first and second driver MOS transistors, first and second load MOS transistors and first and second access MOS transistors, two capacitors are arranged spaced apart from each other on embedded interconnections to be storage nodes, with lower and upper cell plates cross-coupled to each other.
公开/授权文献
- US20090189209A1 SEMICONDUCTOR MEMORY DEVICE 公开/授权日:2009-07-30