发明授权
- 专利标题: High-performance FET device layout
- 专利标题(中): 高性能FET器件布局
-
申请号: US11923919申请日: 2007-10-25
-
公开(公告)号: US07791160B2公开(公告)日: 2010-09-07
- 发明人: Jonghae Kim , Sungjae Lee , Jean-Olivier Plouchart , Scott Keith Springer
- 申请人: Jonghae Kim , Sungjae Lee , Jean-Olivier Plouchart , Scott Keith Springer
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Schmeiser, Olsen & Watts
- 代理商 Richard M. Kotulak
- 主分类号: H01L29/786
- IPC分类号: H01L29/786
摘要:
A fast FET, a method and system for designing the fast FET and a design structure of the fast FET. The method includes: selecting a reference design for a field effect transistor, the field effect transistor including a source, a drain, a channel between the source and drain, a gate electrode over the channel, at least one source contact to the source and at least one contact to the drain, the at least one source contact spaced a first distance from the gate electrode and the at least one drain contact spaced a second distance from the gate electrode; and adjusting the first distance and the second distance to maximize a performance parameter of the field effect transistor to create a fast design for the field effect transistor.
公开/授权文献
- US20090108349A1 HIGH-PERFORMANCE FET DEVICE LAYOUT 公开/授权日:2009-04-30