A semiconductor memory device includes a memory cell array of memory cells each including a cell transistor and a ferroelectric capacitor; a sense amp circuit operative to sense/amplify a signal read out of the ferroelectric capacitor through a pair of bit lines; a pair of decoupling transistors provided on the pair of bit lines to decouple the bit lines; a control circuit operative to provide a control signal to the gates of the decoupling transistors to control conduction of the decoupling transistors; and a dummy capacitor provided in connection with at least either one of the pair of bit lines between the decoupling transistors and the sense amp circuit. The control circuit is configured to be capable of turning the decoupling transistors from on to off when a certain period of time elapsed after the beginning of reading.