发明授权
US07791968B2 Determining history state of data in data retaining device based on state of partially depleted silicon-on-insulator
失效
基于部分耗尽的绝缘体上硅的状态确定数据保存装置中数据的历史状态
- 专利标题： Determining history state of data in data retaining device based on state of partially depleted silicon-on-insulator
- 专利标题（中）： 基于部分耗尽的绝缘体上硅的状态确定数据保存装置中数据的历史状态
-
申请号： US11924955申请日： 2007-10-26
-
公开(公告)号： US07791968B2公开(公告)日： 2010-09-07
- 发明人: Kerry Bernstein , Kenneth J. Goodnow , Clarence R. Ogilvie , Sebastian T. Ventrone , Keith R. Williams
- 申请人： Kerry Bernstein , Kenneth J. Goodnow , Clarence R. Ogilvie , Sebastian T. Ventrone , Keith R. Williams
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Hoffman Warnick LLC
- 代理商 Michael LeStrange
- 主分类号： G11C29/00
- IPC分类号： G11C29/00
摘要：
An integrated circuit and a design structure are disclosed. An integrated circuit may comprise: a data retaining device; a partially depleted silicon-on-insulator (PD SOI) device electrically coupled to the data retaining device; and a measurement device coupled to the PD SOI device for measuring a state of the PD SOI device indicating a body voltage thereof, the measuring device being communicatively coupled to a calculating means which determines a history state of a data in the data retaining device based on the measured state of the PD SOI device.
公开/授权文献
信息查询
