发明授权
- 专利标题： Gas ring and method of processing substrates
- 专利标题（中）： 气体环和处理基材的方法
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申请号： US11254294申请日： 2005-10-19
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公开(公告)号： US07794667B2公开(公告)日： 2010-09-14
- 发明人: Katsuhito Nishikawa , Gary M. Moore , Aaron David Ingles
- 申请人： Katsuhito Nishikawa , Gary M. Moore , Aaron David Ingles
- 申请人地址： US CA Tracy
- 专利权人： Moore Epitaxial, Inc.
- 当前专利权人： Moore Epitaxial, Inc.
- 当前专利权人地址： US CA Tracy
- 代理机构： Gunnison, McKay & Hodgson, L.L.P.
- 代理商 Serge J. Hodgson
- 主分类号： B01J19/00
- IPC分类号： B01J19/00 ; H01L21/20 ; H01L21/36
摘要：
A process gas to a reactor volume of a semiconductor processing reactor is provided through gas injector ports of a gas ring. The process gas flows horizontally from the gas injector ports across a principal surface of a rotating susceptor to exhaust ports of the gas ring. The spent process gas is removed from the reactor volume through the exhaust ports.
公开/授权文献
- US20070087533A1 Gas ring and method of processing substrates 公开/授权日：2007-04-19
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