发明授权
US07796427B2 Method and apparatus for writing data to and reading data from phase-change random access memory
有权
从相变随机存取存储器向数据写入和读取数据的方法和装置
- 专利标题: Method and apparatus for writing data to and reading data from phase-change random access memory
- 专利标题(中): 从相变随机存取存储器向数据写入和读取数据的方法和装置
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申请号: US12231239申请日: 2008-08-29
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公开(公告)号: US07796427B2公开(公告)日: 2010-09-14
- 发明人: Jin-kyu Kim , Kyoung-il Bang , Hyung-gyu Lee
- 申请人: Jin-kyu Kim , Kyoung-il Bang , Hyung-gyu Lee
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Mills & Onello, LLP
- 优先权: KR10-2007-0099881 20071004
- 主分类号: G11C11/00
- IPC分类号: G11C11/00
摘要:
A method and apparatus for writing data to and reading data from a phase-change random access memory (PRAM) include encoding original data using a predetermined encoding function, selecting data, from among the original data and the encoded data, which require less power when being written to the PRAM, writing the selected data to the PRAM, generating marking information related to the selected data, and writing the marking information to the PRAM. Therefore, power consumption can be reduced when data are written to the PRAM.
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