发明授权
- 专利标题: Asymmetric write for ferroelectric storage
- 专利标题(中): 铁电存储不对称写
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申请号: US12198419申请日: 2008-08-26
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公开(公告)号: US07796494B2公开(公告)日: 2010-09-14
- 发明人: Tong Zhao , Andreas Roelofs , Martin Forrester
- 申请人: Tong Zhao , Andreas Roelofs , Martin Forrester
- 申请人地址: US CA Scotts Valley
- 专利权人: Seagate Technology, LLC
- 当前专利权人: Seagate Technology, LLC
- 当前专利权人地址: US CA Scotts Valley
- 代理机构: Campbell Nelson Whipps LLC
- 主分类号: G11B9/00
- IPC分类号: G11B9/00
摘要:
A method of writing to ferroelectric storage medium includes the steps of applying a first write voltage to a ferroelectric layer for writing a first bit in a first polarization direction and applying a second write voltage to the ferroelectric layer for writing a second bit in a second polarization direction opposing the first polarization direction. The first write voltage having a first magnitude, and the second write voltage having a second magnitude being greater than the first magnitude. The ferroelectric layer having a ferroelectric imprint polarization direction, and the first polarization direction being substantially the same as the ferroelectric imprint polarization direction. The ferroelectric medium contains first bits with a first surface area that is substantially equal to second bits surface area. A probe storage apparatus can use this method and ferroelectric medium.
公开/授权文献
- US20100054111A1 ASYMMETRIC WRITE FOR FERROELECTRIC STORAGE 公开/授权日:2010-03-04