发明授权
- 专利标题： Ruthenium alloy film for copper interconnects
- 专利标题（中）： 用于铜互连的钌合金膜
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申请号： US12129345申请日： 2008-05-29
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公开(公告)号： US07799674B2公开(公告)日： 2010-09-21
- 发明人: Hiroshi Shinriki , Hiroaki Inoue
- 申请人： Hiroshi Shinriki , Hiroaki Inoue
- 申请人地址： JP Tokyo
- 专利权人： ASM Japan K.K.
- 当前专利权人： ASM Japan K.K.
- 当前专利权人地址： JP Tokyo
- 代理机构： Knobbe, Martens, Olson & Bear LLP
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763 ; H01L21/44 ; H01L21/302 ; H01L21/461 ; H01L29/40 ; H01L23/52 ; H01L23/48
摘要：
A method for forming interconnect wiring, includes: (i) covering a surface of a connection hole penetrating through interconnect dielectric layers formed on a substrate for interconnect wiring, with an underlying alloy layer selected from the group consisting of an alloy film containing ruthenium (Ru) and at least one other metal atom (M), a nitride film thereof, a carbide film thereof, and an nitride-carbide film thereof, and (ii) filling copper or a copper compound in the connection hole covered with the underlying layer.
公开/授权文献
- US20090209101A1 RUTHENIUM ALLOY FILM FOR COPPER INTERCONNECTS 公开/授权日：2009-08-20
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