发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US11858585申请日: 2007-09-20
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公开(公告)号: US07800155B2公开(公告)日: 2010-09-21
- 发明人: Koichi Matsuno
- 申请人: Koichi Matsuno
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2006-254385 20060920
- 主分类号: H01L27/115
- IPC分类号: H01L27/115
摘要:
A semiconductor device includes a gate insulating film formed on a semiconductor substrate, a first gate electrode formed on the gate insulating film, a second gate electrode formed on the gate insulating film between the first gate electrode and a contact plug, a first silicon oxide film formed above the substrate between the first and second gate electrodes, a first silicon nitride film formed along the substrate and a side surface of the second gate electrode between the contact plug and the second gate electrode, a second silicon oxide film formed on the first silicon oxide film, the first gate electrode and the second gate electrode, the second silicon oxide film including an upper surface having a height greater than the height of a first upper surface of the first gate electrode relative to the substrate, and a second silicon nitride film formed on the second silicon oxide film.