发明授权
US07800193B2 Photodiode, method for manufacturing such photodiode, optical communication device and optical interconnection module
有权
光电二极管，制造这种光电二极管的方法，光通信装置和光互连模块
- 专利标题： Photodiode, method for manufacturing such photodiode, optical communication device and optical interconnection module
- 专利标题（中）： 光电二极管，制造这种光电二极管的方法，光通信装置和光互连模块
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申请号： US12282959申请日： 2007-03-08
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公开(公告)号： US07800193B2公开(公告)日： 2010-09-21
- 发明人: Junichi Fujikata , Keishi Ohashi
- 申请人： Junichi Fujikata , Keishi Ohashi
- 申请人地址： JP Tokyo
- 专利权人： NEC Corporation
- 当前专利权人： NEC Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Young & Thompson
- 优先权： JP2006-067594 20060313
- 国际申请： PCT/JP2007/054545 WO 20070308
- 国际公布： WO2007/105593 WO 20070920
- 主分类号： H01L31/108
- IPC分类号： H01L31/108
摘要：
Both high light receiving sensitivity and high speed of a photodiode are achieved at the same time. The photodiode is provided with a semiconductor layer (1) and a pair of metal electrodes (2) which are arranged on the surface of the semiconductor layer (1) at an interval (d) and form an MSM junction. The interval (d) satisfies the relationship of λ>d>λ/100, where λ is the wavelength of incident light. The metal electrodes (2) can induce surface plasmon. At least one of the electrodes forms a Schottky junction with the semiconductor layer (1), and a low end portion is embedded in the semiconductor layer (1) to a position at a depth less than λ/2n, where n is the refractive index of the semiconductor layer (1).
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