发明授权
- 专利标题: RFID device having a nonvolatile ferroelectric memory
- 专利标题(中): 具有非易失性铁电存储器的RFID装置
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申请号: US11482029申请日: 2006-07-07
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公开(公告)号: US07800481B2公开(公告)日: 2010-09-21
- 发明人: Hee Bok Kang , Jin Hong Ahn
- 申请人: Hee Bok Kang , Jin Hong Ahn
- 申请人地址: KR Gyeonggi-do
- 专利权人: Hynix Semiconductor Inc.
- 当前专利权人: Hynix Semiconductor Inc.
- 当前专利权人地址: KR Gyeonggi-do
- 代理机构: IP & T Law Firm PLC
- 优先权: KR10-2005-0120633 20051209
- 主分类号: H04Q5/22
- IPC分类号: H04Q5/22 ; G11C7/10 ; G11C7/00
摘要:
A radio frequency identification (RFID) device includes an antenna configured to transmit or receive a radio frequency signal to or from an external communication apparatus; an analog block configured to generate a first power voltage in response to the radio frequency signal; a digital block configured to receive the first power voltage from the analog block, to transmit a response signal to the analog block, and to output a memory control signal; and a memory configured to read/write data in response to the memory control signal, the memory including a high voltage generating unit for generating a second power voltage from the first power voltage, a first portion driven by the second power voltage, and a second portion driven by the first power voltage, wherein the level of the first power voltage is lower than that of the second power voltage.
公开/授权文献
- US20070132557A1 RFID device having a nonvolatile ferroelectric memory 公开/授权日:2007-06-14
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