发明授权
US07801277B2 Field emitter based electron source with minimized beam emittance growth
失效
基于场发射器的电子源具有最小的束发射增长
- 专利标题: Field emitter based electron source with minimized beam emittance growth
- 专利标题(中): 基于场发射器的电子源具有最小的束发射增长
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申请号: US12055536申请日: 2008-03-26
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公开(公告)号: US07801277B2公开(公告)日: 2010-09-21
- 发明人: Yun Zou , Yang Cao , Louis Paul Inzinna , Vasile Bogdan Neculaes
- 申请人: Yun Zou , Yang Cao , Louis Paul Inzinna , Vasile Bogdan Neculaes
- 申请人地址: US NY Niskayuna
- 专利权人: General Electric Company
- 当前专利权人: General Electric Company
- 当前专利权人地址: US NY Niskayuna
- 代理商 Scott J. Asmus
- 主分类号: G21B4/00
- IPC分类号: G21B4/00 ; H01J35/14 ; H01J35/02 ; H01J35/00
摘要:
A system and method for limiting emittance growth in an electron beam is disclosed. The system includes an emitter element configured to generate an electron beam and an extraction electrode positioned adjacent to the emitter element to extract the electron beam out therefrom, the extraction electrode including an opening therethrough. The system also includes a meshed grid disposed in the opening of the extraction electrode to enhance intensity and uniformity of an electric field at a surface of the emitter element and an emittance compensation electrode (ECE) positioned adjacent to the meshed grid on the side of the meshed grid opposite that of the emitter element and configured to control emittance growth of the electron beam.
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