发明授权
- 专利标题: Semiconductor device and method of fabricating the same
- 专利标题(中): 半导体装置及其制造方法
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申请号: US12414172申请日: 2009-03-30
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公开(公告)号: US07803676B2公开(公告)日: 2010-09-28
- 发明人: Jong-ho Park , Chang-Ki Jeon , Hyi-Jeong Park , Hye-mi Kim
- 申请人: Jong-ho Park , Chang-Ki Jeon , Hyi-Jeong Park , Hye-mi Kim
- 申请人地址: KR Bucheon-si
- 专利权人: Fairchild Korea Semiconductor, Ltd.
- 当前专利权人: Fairchild Korea Semiconductor, Ltd.
- 当前专利权人地址: KR Bucheon-si
- 代理机构: Hiscock & Barclay, LLP
- 代理商 Thomas R. FitzGerald, Esq.
- 优先权: KR10-2008-0032705 20080408
- 主分类号: H01L21/8238
- IPC分类号: H01L21/8238 ; H01L21/331 ; H01L21/8222
摘要:
Provided are a semiconductor device and a method of fabricating the semiconductor device. The semiconductor device using a DMOS device includes: a semiconductor substrate, in which a first conductive type well is formed; a first conductive type gate electrode formed on the semiconductor substrate with a gate insulating layer intervening between the gate electrode and the semiconductor substrate; a second conductive type body electrode formed on the semiconductor substrate and separated from the gate electrode; a first conductive type drain electrode formed on the semiconductor substrate and separated from the gate electrode and the body electrode; a second conductive type first body region formed in the well under the body electrode; a second conductive type second body region extending from the first body region to the gate insulating layer and formed in the well; a first conductive type source region formed in the second body region and extending from the first body region to the gate insulating layer; and a first conductive type source electrode extending from the source region to surround the gate electrode on the semiconductor substrate with an insulating layer intervening between the source electrode and gate electrode.
公开/授权文献
- US20090250753A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 公开/授权日:2009-10-08