发明授权
- 专利标题： Polarization-reversed III-nitride light emitting device
- 专利标题（中）： 极化反转的III族氮化物发光器件
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申请号： US11080022申请日： 2005-03-14
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公开(公告)号： US07804100B2公开(公告)日： 2010-09-28
- 发明人: Jonathan J. Wierer, Jr. , M. George Craford , John E. Epler , Michael R. Krames
- 申请人： Jonathan J. Wierer, Jr. , M. George Craford , John E. Epler , Michael R. Krames
- 申请人地址： US CA San Jose NL Eindhoven
- 专利权人： Philips Lumileds Lighting Company, LLC,Koninklijke Philips Electronics N.V.
- 当前专利权人： Philips Lumileds Lighting Company, LLC,Koninklijke Philips Electronics N.V.
- 当前专利权人地址： US CA San Jose NL Eindhoven
- 主分类号： H01L27/15
- IPC分类号： H01L27/15
摘要：
A device structure includes a III-nitride wurtzite semiconductor light emitting region disposed between a p-type region and an n-type region. A bonded interface is disposed between two surfaces, one of the surfaces being a surface of the device structure. The bonded interface facilitates an orientation of the wurtzite c-axis in the light emitting region that confines carriers in the light emitting region, potentially increasing efficiency at high current density.
公开/授权文献
- US20060202215A1 Polarization-reversed III-nitride light emitting device 公开/授权日：2006-09-14
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