Invention Grant
- Patent Title: Semiconductor element structure and method for making the same
- Patent Title (中): 半导体元件结构及其制造方法
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Application No.: US12033017Application Date: 2008-02-19
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Publication No.: US07804141B2Publication Date: 2010-09-28
- Inventor: Tian-Fu Chiang , Li-Wei Cheng , Che-Hua Hsu , Chih-Hao Yu , Cheng-Hsien Chou , Chien-Ming Lai , Yi-Wen Chen , Chien-Ting Lin , Guang-Hwa Ma
- Applicant: Tian-Fu Chiang , Li-Wei Cheng , Che-Hua Hsu , Chih-Hao Yu , Cheng-Hsien Chou , Chien-Ming Lai , Yi-Wen Chen , Chien-Ting Lin , Guang-Hwa Ma
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo; Min-Lee Teng
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
A semiconductor element structure includes a first MOS having a first high-K material and a first metal for use in a first gate, a second MOS having a second high-K material and a second metal for use in a second gate and a bridge channel disposed in a recess connecting the first gate and the second gate for electrically connecting the first gate and the second gate, wherein the bridge channel is embedded in at least one of the first gate and the second gate.
Public/Granted literature
- US20090206415A1 SEMICONDUCTOR ELEMENT STRUCTURE AND METHOD FOR MAKING THE SAME Public/Granted day:2009-08-20
Information query
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